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G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB

G Skill Intl F3-1333C9-4GIS 4GB vs Micron Technology 16ATF4G64AZ-3G2B1 32GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
Micron Technology 16ATF4G64AZ-3G2B1 32GB 需要考虑的原因
Micron Technology 16ATF4G64AZ-3G2B1 32GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    12.4 left arrow 16.5
  • 写入速度，GB/s
    7.5 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 3506

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C16-8GTZ 8GB
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内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U300JJJM16G 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
内存RAM
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 9965640-004.C00G 16GB
Kingston 9965640-004.C00G 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM