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G Skill Intl F3-1333C9-4GIS 4GB
Panram International Corporation R748G2133U2S 8GB

G Skill Intl F3-1333C9-4GIS 4GB vs Panram International Corporation R748G2133U2S 8GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Panram International Corporation R748G2133U2S 8GB

Panram International Corporation R748G2133U2S 8GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.5 left arrow 6.2
    测试中的平均数值
Panram International Corporation R748G2133U2S 8GB 需要考虑的原因
Panram International Corporation R748G2133U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 12.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Panram International Corporation R748G2133U2S 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 24
  • 读取速度，GB/s
    12.4 left arrow 13.4
  • 写入速度，GB/s
    7.5 left arrow 6.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 2078

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Panram International Corporation R748G2133U2S 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Panram International Corporation R748G2133U2S 8GB
Panram International Corporation R748G2133U2S 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3466C19D4/16G 16GB
Kingston KHX3466C19D4/16G 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston CBD24D4S7S8MB-8 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK8GX4M2C3000C16 4GB
Corsair CMK8GX4M2C3000C16 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Panram International Corporation R748G2133U2S 8GB
Panram International Corporation R748G2133U2S 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK64GX4M8A2133C13 8GB
Corsair CMK64GX4M8A2133C13 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology AFLD48EH1P 8GB
Micron Technology AFLD48EH1P 8GB
内存RAM