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G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
A-DATA Technology AO1P21FC8T1-BSKS 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
36
左右 14% 更低的延时
更快的读取速度,GB/s
17.4
13.6
测试中的平均数值
更快的写入速度,GB/s
10.9
8.7
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
36
读取速度,GB/s
17.4
13.6
写入速度,GB/s
10.9
8.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2735
2231
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1B1672EG 2GB
Samsung M393A2K43BB1-CPB 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3600C17-8GTRG 8GB
AMD R5316G1609U2K 8GB
Corsair CMD16GX4M2A2666C15 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M393A1G43DB1-CRC 8GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905713-030.A00G 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9965640-004.C00G 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston XJ69DF-MIE 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston XRMWRN-MIE 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Neo Forza GKE160SO204808-3200 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4400C19-8GTZSW 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Crucial Technology CT16G48C40U5.M8A1 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
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