G Skill Intl F3-14900CL8-4GBXM 4GB vs Corsair CMWX16GC3000C15W4 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Corsair CMWX16GC3000C15W4 16GB

Corsair CMWX16GC3000C15W4 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 16.7

测试中的平均数值

Corsair CMWX16GC3000C15W4 16GB

需要考虑的原因
Corsair CMWX16GC3000C15W4 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 31

左右 -29% 更低的延时
更快的写入速度，GB/s

12.3 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMWX16GC3000C15W4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 24
读取速度，GB/s

17.4 16.7
写入速度，GB/s

10.9 12.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT102464BA160B.M16 8GB

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G Skill Intl F4-3200C14-8GTZKY 8GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3200C14-16GTZ 16GB

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Kingston 9905403-444.A00LF 4GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB