RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-8GTZKY 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-8GTZKY 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3200C14-8GTZKY 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C14-8GTZKY 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
24
左右 -9% 更低的延时
更快的读取速度,GB/s
20.4
16
测试中的平均数值
更快的写入速度,GB/s
16.2
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-8GTZKY 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
22
读取速度,GB/s
16.0
20.4
写入速度,GB/s
12.5
16.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3779
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C14-8GTZKY 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SH564128FH8NZQNSCG 4GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTZKY 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965662-002.A01G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMW32GX4M4D3600C16 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Corsair CMX4GX3M1A1333C9 4GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905701-141.A00G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Samsung M393B1G70BH0-CK0 8GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston 99U5428-018.A00LF 8GB
Corsair CMD32GX4M4C3000C15 8GB
Samsung M378B5673EH1-CF8 2GB
Samsung M378A2K43BB1-CRC 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
报告一个错误
×
Bug description
Source link