G Skill Intl F3-14900CL8-4GBXM 4GB vs Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 16% 更低的延时
更快的读取速度，GB/s

17.4 11.4

测试中的平均数值
更快的写入速度，GB/s

10.9 7.4

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMZ16GX3M2A2400C10 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

31 37
读取速度，GB/s

17.4 11.4
写入速度，GB/s

10.9 7.4
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2735 1683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DOVF1B163G2G 2GB

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Kingston 9905458-017.A01LF 4GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMD16GX4M2A2400C14 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Kingston 99U5584-007.A00LF 4GB

Kingston 9905703-009.A00G 16GB

Kingston 9905703-009.A00G 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Corsair CMK16GX4M2A2400C16 8GB

Corsair CMK16GX4M2A2400C16 8GB