G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology CT4G4SFS824A.C8FF 4GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 16.1

测试中的平均数值

Crucial Technology CT4G4SFS824A.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 -24% 更低的延时
更快的写入速度，GB/s

11.1 10.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 25
读取速度，GB/s

17.4 16.1
写入速度，GB/s

10.9 11.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M471B5173DB0-YK0 4GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Avexir Technologies Corporation T-20181206 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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G Skill Intl F4-4800C18-8GTRS 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB