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G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Essencore Limited IMA41GU6MFR8N-CF0 8GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Essencore Limited IMA41GU6MFR8N-CF0 8GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
Essencore Limited IMA41GU6MFR8N-CF0 8GB 需要考虑的原因
Essencore Limited IMA41GU6MFR8N-CF0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 31
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 22
  • 读取速度，GB/s
    17.4 left arrow 18.4
  • 写入速度，GB/s
    10.9 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 3178

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGP7.AZ20B 8GB
Apacer Technology 78.CAGP7.AZ20B 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMD16GX4M4B3400C16 4GB
Corsair CMD16GX4M4B3400C16 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.DAGRL.4050C 16GB
Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-4400C19-16GVK 16GB
G Skill Intl F4-4400C19-16GVK 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMK32GX4M4K4266C19 8GB
Corsair CMK32GX4M4K4266C19 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM