G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-3600C16-8GTZR 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 -11% 更低的延时
更快的读取速度，GB/s

19.1 17.4

测试中的平均数值
更快的写入速度，GB/s

16.9 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3600C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 28
读取速度，GB/s

17.4 19.1
写入速度，GB/s

10.9 16.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3859

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

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Samsung M391B5673FH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N