G Skill Intl F3-14900CL8-4GBXM 4GB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 32

左右 3% 更低的延时

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

报告一个错误

更快的读取速度，GB/s

22.6 17.4

测试中的平均数值
更快的写入速度，GB/s

16.4 10.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 32
读取速度，GB/s

17.4 22.6
写入速度，GB/s

10.9 16.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2735 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Kingston KVR16N11/8-SP 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Avant Technology W642GU42J9266N8 16GB

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Samsung M471B5674QH0-YK0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

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Kingston 9905403-447.A00LF 4GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

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Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB