G Skill Intl F3-14900CL8-4GBXM 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 18% 更低的延时
更快的读取速度，GB/s

17.4 9.4

测试中的平均数值
更快的写入速度，GB/s

10.9 8.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 38
读取速度，GB/s

17.4 9.4
写入速度，GB/s

10.9 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 2110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingston 9905712-048.A00G 16GB

Kingston 9905712-048.A00G 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMW32GX4M4K4000C19 8GB

Corsair CMW32GX4M4K4000C19 8GB