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G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KDK8NX-MIE 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Kingston KDK8NX-MIE 16GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 34
    左右 9% 更低的延时
Kingston KDK8NX-MIE 16GB 需要考虑的原因
Kingston KDK8NX-MIE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.7 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KDK8NX-MIE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 34
  • 读取速度，GB/s
    17.4 left arrow 17.4
  • 写入速度，GB/s
    10.9 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 3142

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Kingston KDK8NX-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Avexir Technologies Corporation DDR3 2400 CL10 4GB 4GB
Avexir Technologies Corporation DDR3 2400 CL10 4GB 4GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston LV32D4U2S8ME-16X 16GB
Kingston LV32D4U2S8ME-16X 16GB
内存RAM