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G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KF3200C18D4/8G 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Kingston KF3200C18D4/8G 8GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
Kingston KF3200C18D4/8G 8GB 需要考虑的原因
Kingston KF3200C18D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 31
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    21.9 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KF3200C18D4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 30
  • 读取速度，GB/s
    17.4 left arrow 21.9
  • 写入速度，GB/s
    10.9 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 3650

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Kingston KF3200C18D4/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KF3200C18D4/8G 8GB
Kingston KF3200C18D4/8G 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston K000MD44U 4GB
Kingston K000MD44U 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM