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G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Micron Technology 16ATF2G64AZ-2G3E1 16GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 42
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 9.0
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G3E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3E1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 42
  • 读取速度，GB/s
    17.4 left arrow 13.3
  • 写入速度，GB/s
    10.9 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 2427

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Samsung M378B1G73AH0-CH9 8GB
Samsung M378B1G73AH0-CH9 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
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Kingston KHX3000C16D4/32GX 32GB
内存RAM
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Ramaxel Technology RMUA5110MB78HAF-2400 8GB
内存RAM
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SK Hynix HMA451U6AFR8N-TF 4GB
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内存RAM
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Crucial Technology BL8G32C16U4RL.M8FE1 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
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Essencore Limited KD48GS481-26N1600 8GB
内存RAM
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内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
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G Skill Intl F3-2133C9-4GAB 4GB
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Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM