Kingston KHX1866C10D3/8GX 8GB vs Samsung M378B1G73AH0-CH9 8GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

Samsung M378B1G73AH0-CH9 8GB

Samsung M378B1G73AH0-CH9 8GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 73

左右 47% 更低的延时
更快的读取速度，GB/s

14.4 6.1

测试中的平均数值
更快的写入速度，GB/s

9.8 3.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M378B1G73AH0-CH9 8GB

需要考虑的原因
Samsung M378B1G73AH0-CH9 8GB

报告一个错误

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

Samsung M378B1G73AH0-CH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 73
读取速度，GB/s

14.4 6.1
写入速度，GB/s

9.8 3.2
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2600 1004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston X74R9W-MIE 8GB

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Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

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A-DATA Technology DQVE1908 512MB

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Kingston 9905744-005.A00G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMK32GX4M4A2400C12 8GB

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Kingston 9905458-017.A01LF 4GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB