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G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Micron Technology 16ATF4G64HZ-3G2E1 32GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
38
左右 18% 更低的延时
更快的读取速度,GB/s
17.4
16.4
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB
报告一个错误
更快的写入速度,GB/s
13.7
10.9
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
38
读取速度,GB/s
17.4
16.4
写入速度,GB/s
10.9
13.7
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2735
3206
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMK16GX4M2K4000C19 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905701-018.A00G 16GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-4000C19-16GTZR 16GB
Kingston 9905471-002.A00LF 2GB
Avant Technology J642GU42J5213N2 16GB
Kingston 99U5403-050.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Samsung 1600 CL10 Series 8GB
Kingston KHX3466C19D4/8G 8GB
Kingston ACR512X64D3S13C9G 4GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3000C14-8GTZ 8GB
Kingston ACR512X64D3S13C9G 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CM4X8GE2400C16K4 8GB
报告一个错误
×
Bug description
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