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G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix GKE160UD102408-2133 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs SK Hynix GKE160UD102408-2133 16GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 78
    左右 60% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 6.4
    测试中的平均数值
SK Hynix GKE160UD102408-2133 16GB 需要考虑的原因
SK Hynix GKE160UD102408-2133 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix GKE160UD102408-2133 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 78
  • 读取速度，GB/s
    17.4 left arrow 13.1
  • 写入速度，GB/s
    10.9 left arrow 6.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 1584

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

SK Hynix GKE160UD102408-2133 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix GKE160UD102408-2133 16GB
SK Hynix GKE160UD102408-2133 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905678-110.A00G 8GB
Kingston 9905678-110.A00G 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Patriot Memory (PDP Systems) PSD34G160081 4GB
Patriot Memory (PDP Systems) PSD34G160081 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Corsair CMW32GX4M2Z3600C18 16GB
Corsair CMW32GX4M2Z3600C18 16GB
内存RAM