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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-3000C15-8GRRB 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-3000C15-8GRRB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
G Skill Intl F4-3000C15-8GRRB 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3000C15-8GRRB 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
62
左右 -170% 更低的延时
更快的读取速度,GB/s
17.7
7.4
测试中的平均数值
更快的写入速度,GB/s
13.5
5.9
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-3000C15-8GRRB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
23
读取速度,GB/s
7.4
17.7
写入速度,GB/s
5.9
13.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1612
3115
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
G Skill Intl F4-3000C15-8GRRB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M393A2K40BB2-CTD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Essencore Limited KD48GU880-32A160U 8GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M1A2666C16 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX3200C20S4/16GX 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMG64GX4M2D3600C18 32GB
Kingston 99U5584-010.A00LF 4GB
Samsung M393A2K43BB1-CRC 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C16-4GFX 4GB
报告一个错误
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Bug description
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