G Skill Intl F3-14900CL9-4GBSR 4GB vs Micron Technology 8ATF1G64AZ-2G3B1 8GB

总分

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

总分

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

差异规格评论

差异

G Skill Intl F3-14900CL9-4GBSR 4GB

需要考虑的原因
G Skill Intl F3-14900CL9-4GBSR 4GB

报告一个错误

更快的读取速度，GB/s

16.4 15.9

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G3B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 -6% 更低的延时
更快的写入速度，GB/s

11.2 10.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL9-4GBSR 4GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 34
读取速度，GB/s

16.4 15.9
写入速度，GB/s

10.5 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2618 2800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL9-4GBSR 4GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Crucial Technology CT8G4DFS824A.C8FJ 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Corsair CML8GX3M2A1600C9 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB