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G Skill Intl F3-14900CL9-4GBSR 4GB
SK Hynix HMA851U6JJR6N-VK 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB vs SK Hynix HMA851U6JJR6N-VK 4GB

总分
star star star star star
G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

总分
star star star star star
SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

差异 规格 评论

差异

G Skill Intl F3-14900CL9-4GBSR 4GB 需要考虑的原因
G Skill Intl F3-14900CL9-4GBSR 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 9.9
    测试中的平均数值
SK Hynix HMA851U6JJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851U6JJR6N-VK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 36
    左右 -16% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL9-4GBSR 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 31
  • 读取速度，GB/s
    16.4 left arrow 15.5
  • 写入速度，GB/s
    10.5 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2618 left arrow 2060

G Skill Intl F3-14900CL9-4GBSR 4GB RAM的比较

G Skill Intl F4-2133C15-4GVR 4GB
Corsair CMU32GX4M4C3466C16 8GB

SK Hynix HMA851U6JJR6N-VK 4GB RAM的比较

Micron Technology 8ATF1G64AZ-3G2R1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Micron Technology 36ASF2G72PZ-2G1B1 16GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CM4B8G7L2666A16K2-O 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
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Corsair CMH32GX4M2Z3600C18 16GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
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Corsair CMR16GX4M2F4000C19 8GB
内存RAM
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Nanya Technology M2F4G64CB8HB9N-CG 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kingston ACR26D4S9S8HJ-8 8GB
Kingston ACR26D4S9S8HJ-8 8GB
内存RAM