G Skill Intl F3-1600C11-4GIS 4GB vs Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

总分

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

总分

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

差异规格评论

差异

G Skill Intl F3-1600C11-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1600C11-4GIS 4GB

报告一个错误

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 -25% 更低的延时
更快的读取速度，GB/s

17.2 15.5

测试中的平均数值
更快的写入速度，GB/s

12.3 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1600C11-4GIS 4GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 28
读取速度，GB/s

15.5 17.2
写入速度，GB/s

9.0 12.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2405 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64C88B1NS-DI 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB