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G Skill Intl F3-17000CL9-4GBXLD 4GB
Corsair CMU16GX4M2C3000C15 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB vs Corsair CMU16GX4M2C3000C15 8GB

总分
star star star star star
G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分
star star star star star
Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

差异 规格 评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB 需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 30
    左右 30% 更低的延时
Corsair CMU16GX4M2C3000C15 8GB 需要考虑的原因
Corsair CMU16GX4M2C3000C15 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 11.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-17000CL9-4GBXLD 4GB
Corsair CMU16GX4M2C3000C15 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 30
  • 读取速度，GB/s
    16.0 left arrow 17.8
  • 写入速度，GB/s
    11.1 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 3273

G Skill Intl F3-17000CL9-4GBXLD 4GB RAM的比较

G Skill Intl F3-17000CL11-4GBXL 4GB
Kingston KHX16LC9/8GX 8GB

Corsair CMU16GX4M2C3000C15 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Corsair CMU16GX4M2C3000C15 8GB
Corsair CMU16GX4M2C3000C15 8GB
内存RAM
Kingston 9965525-153.A00LF 8GB
Kingston 9965525-153.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM