G Skill Intl F3-17000CL9-4GBXLD 4GB vs Kingston 9905624-004.A00G 4GB

总分

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

差异规格评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB

需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 23

左右 9% 更低的延时

Kingston 9905624-004.A00G 4GB

需要考虑的原因
Kingston 9905624-004.A00G 4GB

报告一个错误

更快的读取速度，GB/s

16.3 16

测试中的平均数值
更快的写入速度，GB/s

12.0 11.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-17000CL9-4GBXLD 4GB

Kingston 9905624-004.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 23
读取速度，GB/s

16.0 16.3
写入速度，GB/s

11.1 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 3200 2OZ 4GB

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Essencore Limited KD4AGU880-36A180U 16GB

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Kingston K1N7HK-ELC 2GB

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Crucial Technology CT8G4SFS832A.C8FE 8GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

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Samsung M391B5673FH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

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Corsair CMD8GX3M2A2933C12 4GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB