G Skill Intl F3-17000CL9-4GBXLD 4GB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异规格评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB

需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB

报告一个错误

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 21

左右 -11% 更低的延时
更快的读取速度，GB/s

21.9 16

测试中的平均数值
更快的写入速度，GB/s

22.2 11.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-17000CL9-4GBXLD 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 19
读取速度，GB/s

16.0 21.9
写入速度，GB/s

11.1 22.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2581 4574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Maxsun MSD416G26Q3 16GB

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Mushkin 991586 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CML8GX3M2A1600C9 4GB

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Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Samsung M3 78T3354BZ0-CCC 256MB

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Samsung M4 70T3354BZ0-CCC 256MB

Samsung M4 70T3354BZ0-CCC 256MB