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G Skill Intl F3-2133C9-4GAB 4GB
Golden Empire CL18-22-22 D4-3600 16GB

G Skill Intl F3-2133C9-4GAB 4GB vs Golden Empire CL18-22-22 D4-3600 16GB

总分
star star star star star
G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分
star star star star star
Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

G Skill Intl F3-2133C9-4GAB 4GB 需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
Golden Empire CL18-22-22 D4-3600 16GB 需要考虑的原因
Golden Empire CL18-22-22 D4-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 11.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
Golden Empire CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    16.4 left arrow 18.2
  • 写入速度，GB/s
    11.0 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2729 left arrow 3533

G Skill Intl F3-2133C9-4GAB 4GB RAM的比较

Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Golden Empire CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMH32GX4M4E3200C16 8GB
Corsair CMH32GX4M4E3200C16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM