SK Hynix HMT151R7TFR4C-H9 4GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

更快的读取速度，GB/s

10.1 7.7

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 48

左右 -17% 更低的延时
更快的写入速度，GB/s

7.6 7.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 41
读取速度，GB/s

10.1 7.7
写入速度，GB/s

7.0 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1955 1855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3866C18-8GTZSW 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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A-DATA Technology DQVE1908 512MB

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB