takeMS International AG TMS2GB264D082-805G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

takeMS International AG TMS2GB264D082-805G 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 56

左右 18% 更低的延时
更快的读取速度，GB/s

5 20.1

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的写入速度，GB/s

10.5 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 56
读取速度，GB/s

5,535.6 20.1
写入速度，GB/s

1,852.4 10.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Corsair CM4X8GF2133C15S2 8GB

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Kingston 9905403-447.A00LF 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Patriot Memory (PDP Systems) PSD416G26662 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston 9905599-029.A00G 4GB