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G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
比较
G Skill Intl F3-2133C9-4GAB 4GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
总分
G Skill Intl F3-2133C9-4GAB 4GB
总分
SK Hynix V-GeN D4H4GL26A8TL5 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
58
左右 38% 更低的延时
更快的写入速度,GB/s
11.0
9.3
测试中的平均数值
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL5 4GB
报告一个错误
更快的读取速度,GB/s
17.7
16.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
58
读取速度,GB/s
16.4
17.7
写入速度,GB/s
11.0
9.3
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2729
1968
G Skill Intl F3-2133C9-4GAB 4GB RAM的比较
Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965662-016.A00G 16GB
Kingston HP32D4S2S1ME-4 4GB
Kingston 99U5474-023.A00LF 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KF2666C16S4/16G 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X4GF2666Z16K4 4GB
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905678-023.A00G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M471A5143EB0-CPB 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-3200C16-8GSX 8GB
报告一个错误
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Bug description
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