G Skill Intl F3-2400C11-8GSR 8GB vs Corsair CMW8GX4M1Z3200C16 8GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

Corsair CMW8GX4M1Z3200C16 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 -26% 更低的延时
更快的读取速度，GB/s

17.3 16.8

测试中的平均数值
更快的写入速度，GB/s

15.3 11.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Corsair CMW8GX4M1Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 27
读取速度，GB/s

16.8 17.3
写入速度，GB/s

11.3 15.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2968 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F3-2400C11-8GSR 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Kingston 9905630-033.A00G 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CB8GU2400.C8D 8GB

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Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

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Apacer Technology 78.01GA0.9K5 1GB

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Samsung M393A4K40CB1-CRC 32GB

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Samsung M393B5170FH0-CH9 4GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB