Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-4000C19-4GVK 4GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

G Skill Intl F4-4000C19-4GVK 4GB

G Skill Intl F4-4000C19-4GVK 4GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

G Skill Intl F4-4000C19-4GVK 4GB

需要考虑的原因
G Skill Intl F4-4000C19-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 57

左右 -185% 更低的延时
更快的读取速度，GB/s

18.8 6.8

测试中的平均数值
更快的写入速度，GB/s

15.1 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-4000C19-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 20
读取速度，GB/s

6.8 18.8
写入速度，GB/s

5.5 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 3162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16ATF4G64HZ-3G2B2 32GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology CT8G4DFD8213.C16FA11 8GB

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Corsair CMK16GX4M2A2666C16 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Corsair CMD32GX4M4C3200C16-R 8GB