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Corsair CMK16GX4M2A2666C16 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
比较
Corsair CMK16GX4M2A2666C16 8GB vs SK Hynix HMA81GS6DJR8N-VK 8GB
总分
Corsair CMK16GX4M2A2666C16 8GB
总分
SK Hynix HMA81GS6DJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMK16GX4M2A2666C16 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
34
左右 9% 更低的延时
更快的读取速度,GB/s
16.8
15.4
测试中的平均数值
更快的写入速度,GB/s
12.8
11.6
测试中的平均数值
需要考虑的原因
SK Hynix HMA81GS6DJR8N-VK 8GB
报告一个错误
更高的内存带宽,mbps
21300
17000
左右 1.25 更高的带宽
规格
完整的技术规格清单
Corsair CMK16GX4M2A2666C16 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
31
34
读取速度,GB/s
16.8
15.4
写入速度,GB/s
12.8
11.6
内存带宽,mbps
17000
21300
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3154
2786
Corsair CMK16GX4M2A2666C16 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA81GS6DJR8N-VK 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR16GX4M2A2666C16 8GB
Kingston 9905403-038.A00LF 4GB
Corsair CM4X16GC3000C16K8 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
AMD AE34G1601U1 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston 9905403-174.A00LF 2GB
Kingston HP32D4U8S8HC-8XR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6MFR8N-TF 16GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CB16GU2666.C8ET 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
TwinMOS 8DPT5MK8-TATP 2GB
Heoriady M471A1K43BB1-CRC 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology CT25664BA1339.M8FK 2GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CB16GU2666.C8ET 16GB
报告一个错误
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Bug description
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