RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA81GS6DJR8N-VK 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 34
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 11.6
    测试中的平均数值
SK Hynix HMA81GS6DJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6DJR8N-VK 8GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 34
  • 读取速度，GB/s
    16.7 left arrow 15.4
  • 写入速度，GB/s
    11.8 left arrow 11.6
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2786

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ20UF8BCS0-DJ-F 2GB
Elpida EBJ20UF8BCS0-DJ-F 2GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Panram International Corporation PUD43000C154G4NJW 4GB
Panram International Corporation PUD43000C154G4NJW 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD128GX4M8A2666C15 16GB
Corsair CMD128GX4M8A2666C15 16GB
内存RAM
Kingston 99U5474-026.A00LF 4GB
Kingston 99U5474-026.A00LF 4GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Kingston MSI24D4S7D8MB-16 16GB
Kingston MSI24D4S7D8MB-16 16GB
内存RAM