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Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 8ATF1G64HZ-2G6D1 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.8
    测试中的平均数值
Micron Technology 8ATF1G64HZ-2G6D1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6D1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    12.4 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    16.1 left arrow 15.8
  • 写入速度，GB/s
    10.1 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2830

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMK16GX4M2K4333C19 8GB
Corsair CMK16GX4M2K4333C19 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.C1GMW.AZC0B 8GB
Apacer Technology 78.C1GMW.AZC0B 8GB
内存RAM