G Skill Intl F3-2400C11-8GSR 8GB vs Kingston 99U5663-003.A00G 16GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 15% 更低的延时
更快的读取速度，GB/s

16.8 13.7

测试中的平均数值
更快的写入速度，GB/s

11.3 9.9

测试中的平均数值

Kingston 99U5663-003.A00G 16GB

需要考虑的原因
Kingston 99U5663-003.A00G 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Kingston 99U5663-003.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 40
读取速度，GB/s

16.8 13.7
写入速度，GB/s

11.3 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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最新比较

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Kingston 99U5584-005.A00LF 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M2B3733C17 8GB

Corsair CMK16GX4M2B3733C17 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Kingston 9965604-027.D00G 8GB

Kingston 9965604-027.D00G 8GB