G Skill Intl F3-2400C11-8GSR 8GB vs Kingston KGTWW1-MIE 4GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 97

左右 65% 更低的延时
更快的读取速度，GB/s

16.8 15.5

测试中的平均数值
更快的写入速度，GB/s

11.3 6.7

测试中的平均数值

Kingston KGTWW1-MIE 4GB

需要考虑的原因
Kingston KGTWW1-MIE 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Kingston KGTWW1-MIE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 97
读取速度，GB/s

16.8 15.5
写入速度，GB/s

11.3 6.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 1479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KGTWW1-MIE 4GB

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Corsair VS1GB800D2 1GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Corsair CMSX4GX3M1A1600C9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Kingston K531R8-ETB 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB