G Skill Intl F3-2400C11-8GSR 8GB vs Samsung M393A2K40CB2-CTD 16GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 52

左右 35% 更低的延时
更快的读取速度，GB/s

16.8 10

测试中的平均数值
更快的写入速度，GB/s

11.3 7.3

测试中的平均数值

Samsung M393A2K40CB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40CB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Samsung M393A2K40CB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 52
读取速度，GB/s

16.8 10.0
写入速度，GB/s

11.3 7.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2968 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology BLS4G4D240FSA.M8FADG 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Samsung M393A2K40CB2-CTD 16GB

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Maxsun MSD44G24Q0 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BLS16G4D26BFSE.16FE 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

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Kingston 9905471-006.A01LF 4GB

G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB