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G Skill Intl F3-2400C11-8GSR 8GB
Transcend Information TS1GLH64V4B 8GB

G Skill Intl F3-2400C11-8GSR 8GB vs Transcend Information TS1GLH64V4B 8GB

总分
star star star star star
G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分
star star star star star
Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

差异 规格 评论

差异

G Skill Intl F3-2400C11-8GSR 8GB 需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB
报告一个错误
Transcend Information TS1GLH64V4B 8GB 需要考虑的原因
Transcend Information TS1GLH64V4B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 34
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2400C11-8GSR 8GB
Transcend Information TS1GLH64V4B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 22
  • 读取速度，GB/s
    16.8 left arrow 17.4
  • 写入速度，GB/s
    11.3 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2968 left arrow 3036

G Skill Intl F3-2400C11-8GSR 8GB RAM的比较

G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-2400C11-8GXM 8GB

Transcend Information TS1GLH64V4B 8GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
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Kingston 9905702-010.A00G 8GB
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Corsair CMG64GX4M2D3600C18 32GB
内存RAM
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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内存RAM
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G Skill Intl F4-3200C16-8GRS 8GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Avant Technology J641GU42J7240N3 8GB
内存RAM
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A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
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内存RAM
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内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM