G Skill Intl F3-2666C12-8GTXD 8GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时
更快的读取速度，GB/s

18.2 11.8

测试中的平均数值
更快的写入速度，GB/s

11.5 10.0

测试中的平均数值

G Skill Intl F4-3200C15-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3200C15-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

18.2 11.8
写入速度，GB/s

11.5 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Corsair CMK64GX4M4A2666C16 16GB

Corsair CMK64GX4M4A2666C16 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

V-Color Technology Inc. TC48G24S817 8GB

V-Color Technology Inc. TC48G24S817 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

SK Hynix HMA82GU6JJR8N-VK 16GB

SK Hynix HMA82GU6JJR8N-VK 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB