RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 9965669-019.A00G 16GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Kingston 9965669-019.A00G 16GB

总分
star star star star star
G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分
star star star star star
Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

差异 规格 评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB 需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.5
    测试中的平均数值
Kingston 9965669-019.A00G 16GB 需要考虑的原因
Kingston 9965669-019.A00G 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 9965669-019.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    18.2 left arrow 11.6
  • 写入速度，GB/s
    11.5 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3067 left arrow 2517

G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB

Kingston 9965669-019.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
MemxPro Inc. D4S8GHIOFFC 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR32GX4M2C3333C16 16GB
Corsair CMR32GX4M2C3333C16 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMD64GX4M4B3000C15 16GB
Corsair CMD64GX4M4B3000C15 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM