G Skill Intl F3-2666C12-8GTXD 8GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时
更快的读取速度，GB/s

18.2 13.7

测试中的平均数值
更快的写入速度，GB/s

11.5 10.6

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1A1 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

18.2 13.7
写入速度，GB/s

11.5 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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Samsung M378B5673EH1-CF8 2GB

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Kingston 9905622-058.A00G 8GB

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Corsair VS1GB800D2 1GB

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Apacer Technology 78.CAGP7.DFW0C 8GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

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AMD R538G1601U2S-UO 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB