RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Micron Technology 8ATF1G64AZ-2G6E1 8GB

总分
star star star star star
G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

差异 规格 评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB 需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 16.2
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G6E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6E1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    12.5 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    18.2 left arrow 16.2
  • 写入速度，GB/s
    11.5 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3067 left arrow 2973

G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology AFLD48EH1P 8GB
Micron Technology AFLD48EH1P 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
SK Hynix HMT451U6BFR8A-PB 4GB
SK Hynix HMT451U6BFR8A-PB 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM