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G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
比较
G Skill Intl F3-2666C12-8GTXD 8GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
总分
G Skill Intl F3-2666C12-8GTXD 8GB
总分
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
更快的读取速度,GB/s
18.2
14.3
测试中的平均数值
更快的写入速度,GB/s
11.5
10.7
测试中的平均数值
需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 -12% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
25
读取速度,GB/s
18.2
14.3
写入速度,GB/s
11.5
10.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3067
2583
G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
takeMS International AG TMS2GB264D082-805G 2GB
V-GEN D4H4GL30A8TS5 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston HP37D4U1S8ME-16XR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Corsair CMSO4GX3M1A1333C9 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9905700-053.A00G 8GB
Kingston 9905471-002.A00LF 2GB
Kingston XN205T-MIE 16GB
Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3000 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited KD4AGS88C-26N1900 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Samsung M471A1G44AB0-CWE 8GB
Kingston KHX2800C14D4/4GX 4GB
Kingston 99P5474-014.A00LF 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
报告一个错误
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