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G Skill Intl F3-2800C12-8GTXDG 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 32
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 11.0
    测试中的平均数值
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 32
  • 读取速度，GB/s
    17.4 left arrow 15.7
  • 写入速度，GB/s
    12.2 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 2528

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB RAM的比较

SK Hynix HMT41GS6BFR8A-PB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CMK16GX4M2D3600C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Apacer Technology 78.CAGNT.4050B 8GB
Apacer Technology 78.CAGNT.4050B 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3000C16-16GSXWB 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M2A2400C14 8GB
Corsair CMK16GX4M2A2400C14 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMT32GX4M2C3466C16 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM