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G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs G Skill Intl F4-3200C15-16GTZKW 16GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
G Skill Intl F4-3200C15-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3200C15-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 21
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 12.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3200C15-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 20
  • 读取速度，GB/s
    17.4 left arrow 19.1
  • 写入速度，GB/s
    12.2 left arrow 15.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 3506

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

G Skill Intl F4-3200C15-16GTZKW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3200C15-16GTZKW 16GB
G Skill Intl F4-3200C15-16GTZKW 16GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
G Skill Intl F4-4800C19-8GTESC 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston XW21KG-HYD-NX 8GB
Kingston XW21KG-HYD-NX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW64GX4M4D3600C18 16GB
Corsair CMW64GX4M4D3600C18 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung T471A1K43CB1-CRC 8GB
Samsung T471A1K43CB1-CRC 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM