G Skill Intl F3-2800C12-8GTXDG 8GB vs INTENSO 5641160 8GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

INTENSO 5641160 8GB

INTENSO 5641160 8GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 23

左右 9% 更低的延时
更快的读取速度，GB/s

17.4 16.1

测试中的平均数值
更快的写入速度，GB/s

12.2 10.2

测试中的平均数值

INTENSO 5641160 8GB

需要考虑的原因
INTENSO 5641160 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

INTENSO 5641160 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 23
读取速度，GB/s

17.4 16.1
写入速度，GB/s

12.2 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173QH0-YK0 4GB

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Mushkin 99[2/7/4]205[F/T] 8GB

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Corsair CMD32GX4M2C3200C14T 16GB

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Kingston KHX2666C16D4/16GX 16GB

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Kingston KF2666C16D4/16G 16GB

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Corsair CMK32GX4M4B3000C15 8GB

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Corsair CMK32GX5M2B5200C40 16GB

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Corsair CM4X4GF2133C13K4 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMR32GX4M2C3200C16 16GB

Corsair CMR32GX4M2C3200C16 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905713-008.A00G 4GB

Kingston 9905713-008.A00G 4GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N