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G Skill Intl F4-3600C16-8GTZKK 8GB
Corsair CMD32GX4M4B2800C14 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB vs Corsair CMD32GX4M4B2800C14 8GB

总分
star star star star star
G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

总分
star star star star star
Corsair CMD32GX4M4B2800C14 8GB

Corsair CMD32GX4M4B2800C14 8GB

差异 规格 评论

差异

G Skill Intl F4-3600C16-8GTZKK 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTZKK 8GB
报告一个错误
  • 更快的写入速度，GB/s
    16.6 left arrow 15.5
    测试中的平均数值
Corsair CMD32GX4M4B2800C14 8GB 需要考虑的原因
Corsair CMD32GX4M4B2800C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 27
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 18.6
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F4-3600C16-8GTZKK 8GB
Corsair CMD32GX4M4B2800C14 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 19
  • 读取速度，GB/s
    18.6 left arrow 20.5
  • 写入速度，GB/s
    16.6 left arrow 15.5
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3938 left arrow 3665

G Skill Intl F4-3600C16-8GTZKK 8GB RAM的比较

Kingston 9965640-016.A00G 32GB
Crucial Technology CT8G4DFS824A.C8FE 8GB

Corsair CMD32GX4M4B2800C14 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C16-16GIS 16GB
G Skill Intl F4-3200C16-16GIS 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-16GSXF 16GB
G Skill Intl F4-2400C17-16GSXF 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM
Kingston ACR16D3LS1NBG/4G 4GB
Kingston ACR16D3LS1NBG/4G 4GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905713-004.A00G 4GB
Kingston 9905713-004.A00G 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM