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G Skill Intl F4-3600C19-16GSXKB 16GB
Corsair CMR128GX4M8C3000C16 16GB
比较
G Skill Intl F4-3600C19-16GSXKB 16GB vs Corsair CMR128GX4M8C3000C16 16GB
总分
G Skill Intl F4-3600C19-16GSXKB 16GB
总分
Corsair CMR128GX4M8C3000C16 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F4-3600C19-16GSXKB 16GB
报告一个错误
需要考虑的原因
Corsair CMR128GX4M8C3000C16 16GB
报告一个错误
低于PassMark测试中的延时,ns
21
30
左右 -43% 更低的延时
更快的读取速度,GB/s
19.7
18.2
测试中的平均数值
更快的写入速度,GB/s
15.9
15.0
测试中的平均数值
规格
完整的技术规格清单
G Skill Intl F4-3600C19-16GSXKB 16GB
Corsair CMR128GX4M8C3000C16 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
30
21
读取速度,GB/s
18.2
19.7
写入速度,GB/s
15.0
15.9
内存带宽,mbps
17000
17000
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3580
3594
G Skill Intl F4-3600C19-16GSXKB 16GB RAM的比较
Micron Technology 8ATF2G64HZ-2G3A1 16GB
G Skill Intl F4-4266C19-8GTRS 8GB
Corsair CMR128GX4M8C3000C16 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor FSGG45F-D8KMB 8GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMR16GX4M2Z3200C16 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
ASint Technology SSA302G08-EGN1C 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C19-8GVSB 8GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston CBD24D4U7S8MA-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Samsung M378A1K43EB2-CWE 8GB
Kingston MSI26D4S9S8ME-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2800 8GB
报告一个错误
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