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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A5244CB0-CTD 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异 规格 评论

差异

Ramaxel Technology RMSA3260NA78HAF-2666 8GB 需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A5244CB0-CTD 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 15.8
  • 写入速度，GB/s
    7.8 left arrow 11.8
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2497

Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M393B1G70BH0-CK0 8GB
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Corsair CMW16GX4M2Z4600C18 8GB
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A-DATA Technology VDQVE1B16 2GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMD32GX4M4B3200C16 8GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK16GX4M1D3000C16 16GB
Corsair CMK16GX4M1D3000C16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-2666C18-8GFX 8GB
G Skill Intl F4-2666C18-8GFX 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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Panram International Corporation W4N2400PS-8G 8GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT25664BA160B.C8FK 2GB
Crucial Technology CT25664BA160B.C8FK 2GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
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