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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Crucial Technology BLM8G44C19U4B.M8FE1 8GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    24 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 16.0
    测试中的平均数值
Crucial Technology BLM8G44C19U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 -16% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 25
  • 读取速度，GB/s
    24.0 left arrow 17.9
  • 写入速度，GB/s
    20.0 left arrow 16.0
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 3651

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C15-8GVK 8GB
G Skill Intl F4-2666C15-8GVK 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905702-071.A00G 8GB
Kingston 9905702-071.A00G 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Essencore Limited KD48GU880-36A180X 8GB
Essencore Limited KD48GU880-36A180X 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/8GX 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM