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G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F5-5600J4040C16G 16GB vs G Skill Intl F4-2666C18-4GRS 4GB

总分
star star star star star
G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分
star star star star star
G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

差异 规格 评论

差异

G Skill Intl F5-5600J4040C16G 16GB 需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 31
    左右 29% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 11.4
    测试中的平均数值
G Skill Intl F4-2666C18-4GRS 4GB 需要考虑的原因
G Skill Intl F4-2666C18-4GRS 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2666C18-4GRS 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 31
  • 读取速度，GB/s
    14.9 left arrow 14.9
  • 写入速度，GB/s
    13.5 left arrow 11.4
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3679 left arrow 2330

G Skill Intl F5-5600J4040C16G 16GB RAM的比较

Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB

G Skill Intl F4-2666C18-4GRS 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Corsair CMK32GX4M2A2400C16 16GB
Corsair CMK32GX4M2A2400C16 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston CBD24D4U7S8MA-8 8GB
Kingston CBD24D4U7S8MA-8 8GB
内存RAM
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM